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Badeecadaha

  • Qaybaha Dayactirka Dhoobada ee Qalabka Baaritaanka Semiconductor

    Qaybaha Dayactirka Dhoobada ee Qalabka Baaritaanka Semiconductor

    Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.

    Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.

  • Qalabka Qalabka Semiconductor-ka ee Saxanka Dhoobada

    Qalabka Qalabka Semiconductor-ka ee Saxanka Dhoobada

    Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.

    Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.

  • Qalabka Semiconductor Qaybaha Dayactirka Dhoobada

    Qalabka Semiconductor Qaybaha Dayactirka Dhoobada

    Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.

    Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.

  • Giraangiraha Shaabadda Ceramic-ka ee Alumina ee Nadiifka Sare leh ee Shaabadda Qolka Heerkulka Sare leh

    Giraangiraha Shaabadda Ceramic-ka ee Alumina ee Nadiifka Sare leh ee Shaabadda Qolka Heerkulka Sare leh

    Giraanta shaabadda dhoobada ah ee St.Cera waxaa loogu talagalay inay beddel u noqoto giraanta O-polymer-ka ee ku jirta deegaannada aadka u daran halkaas oo elastomers-ku ay burburaan. Waxaa laga sameeyay 99.8% alumina saafi ah oo sareysa (Al₂O₃), giraanta shaabadda adag waxaa loo isticmaalaa codsiyada shaabadda taagan - badanaa waxaa lagu lamaaniyaa gaaska birta jilicsan ama graphite - si loo bixiyo haynta faakuumka ama gaaska oo la isku halleyn karo heerkulka ilaa 800°C iyo deegaannada daran ee plasma ama kiimikada. Maaddadu waxay bixisaa gaas eber ah, xoog cadaadis sare leh (xoogga dabacsan ee salka ku jira 361 MPa), iyo firfircooni la'aan kiimiko ah (u adkaysta halogens, asiidhyo, iyo alkali marka laga reebo HF). Meelaha shaabadda ee si sax ah loo daboolay (fidsanaan ≤5 μm, qallafsanaanta dusha sare Ra ≤0.2 μm) waxay hubisaa in si adag loo taabto qaybaha birta ama dhoobada isku dhafan.

  • Giraanta Diiradda Sare ee Alumina Chamber ee loogu talagalay Nidaamyada Plasma Etch & CVD

    Giraanta Diiradda Sare ee Alumina Chamber ee loogu talagalay Nidaamyada Plasma Etch & CVD

    Giraanta diiradda saarta qolka St.Cera waa qayb muhiim ah oo qalabka habka loo isticmaalo qalabka plasma etch, CVD, iyo PVD semiconductor. Waxaa laga soo saaray 99.8% alumina saafi ah oo sare (Al₂O₃), giraantu waxay ku wareegsan tahay geeska wafer si ay u xaddido balaasmaha una wanaajiso qaybinta xagasha ion, taasoo hagaajinaysa isku-dhafka etch ee dusha sare ee wafer-ka. Maaddadu waxay bixisaa iska caabin balaasma oo heer sare ah, xoog dielectric sare (15×10⁶ V/m), iyo xasillooni kuleyl ilaa 1600°C, taasoo hubinaysa isku hallayn muddo dheer ah oo ku jirta jawi balaasma oo ku salaysan fluorine ama chlorine. Aqoonsiga dhulka saxda ah iyo fidsanaanta (≤10 μm) waxay suurtogalinaysaa meelaynta geeska wafer sax ah, yareynta cilladaha geeska iyo soo saarista walxaha.

  • Giraan Dhoobada Alumina ee Nadiifka Sare leh ee loogu talagalay Qolalka Habka CVD / PVD

    Giraan Dhoobada Alumina ee Nadiifka Sare leh ee loogu talagalay Qolalka Habka CVD / PVD

    Giraangiraha dhoobada ah ee St.Cera waxaa si gaar ah loogu talagalay in loogu isticmaalo qolalka habka CVD (Kiimikada Uumiga Kala-bixinta) iyo PVD (Qalabka Kala-bixinta Uumiga Jirka). Waxaa laga soo saaray 99.8% alumina saafi ah oo sareysa (Al₂O₃), giraantani waxay u adeegtaa sidii dahaarka qolka, giraanta diiradda saarta, ama qaybta qalabka habka si loo xaddido balaasmaha loona ilaaliyo derbiyada qolka nabaad-guurka. Maaddadu waxay bixisaa iska caabin balaasmaha oo aad u fiican, xoog dielectric sare (15×10⁶ V/m), iyo xasillooni kuleyl ilaa 1600°C, taasoo hubinaysa cimri dheer oo adeeg ah oo ku jira jawi balaasmaha ku salaysan fluorine oo gardarro leh. Dulqaad cabbir oo sax ah (±0.05 mm oo ku saabsan ID/OD) iyo fidsanaan (≤10 μm) waxay suurtogal ka dhigaysaa booska geeska wafer ee joogtada ah, hagaajinta isku-dhafka dhigista iyo yaraynta soo saarista walxaha.

  • Waxyeelaha Dhammaadka Dhoobada ee Bernoulli — Maareynta Wafer-ka Aan Taabashada Lahayn ee Wafer-ka Khafiifka ah iyo kuwa Jilicsan

    Waxyeelaha Dhammaadka Dhoobada ee Bernoulli — Maareynta Wafer-ka Aan Taabashada Lahayn ee Wafer-ka Khafiifka ah iyo kuwa Jilicsan

    Qalabka wax soo saarka dhammaadka dhoobada ee St.Cera's Bernoulli wuxuu adeegsadaa kor u qaadis hawo-qaadis ah si uu u maareeyo buskudka iyada oo aan la taaban jirka. Waxaa laga sameeyay 99.8% alumina (Al₂O₃) ama silicon carbide (SiC), waxay leedahay tuubooyin si sax ah loo farsameeyay oo soo saara gaaska cadaadiska leh si loo abuuro filim hawo khafiif ah oo u dhexeeya qalabka wax soo saarka dhammaadka iyo buskudka. Mabda'an aan taabashada lahayn wuxuu baabi'iyaa wasakhda dhabarka, jajabka geeska, iyo dhaawaca dusha sare, taasoo ka dhigaysa mid ku habboon buskudka khafiifka ah (≤100 μm), buskudka jilicsan, ama qalloocan. Substrate-ka dhoobada ah wuxuu bixiyaa xoog dabacsan oo sare (361 MPa ee Al₂O₃; ilaa 550–600 MPa ee SiC), cufnaan hooseeya, iyo xasillooni cabbir oo aad u fiican, taasoo hubinaysa meelaynta lagu celin karo ee robotyada wareejinta buskudka xawaaraha sare leh.

  • Qaybaha Dhoobada Alumina ee Nadiifka Sare leh ee loogu talagalay Codsiyada Semiconductor & Warshadaha

    Qaybaha Dhoobada Alumina ee Nadiifka Sare leh ee loogu talagalay Codsiyada Semiconductor & Warshadaha

    St.Cera waxay soo saartaa qaybo dhoobo ah oo alumina (Al₂O₃) ah oo lagu farsameeyay makiinada saxda ah iyadoo loo eegayo tilmaamaha macaamiisha. Iyada oo la adeegsanayo 99.8% alumina saafi ah oo sare, qaybahani waxay bixiyaan xoog dabacsan oo heer sare ah (361 MPa), adkeysi sare (16 GPa), iyo xoog dielectric oo heer sare ah (15 × 10⁶ V/m). Waxaa loogu talagalay qalabka semiconductor-ka, isku-dhafka u adkaysta xirashada, dahaarka korontada, iyo qalabka heerkulka sare, agabku wuxuu bixiyaa nuugista biyaha ku dhow eber (0%) iyo isku-darka ballaarinta kulaylka oo ah 7.2 × 10⁻⁶/℃, taasoo hubinaysa xasilloonida cabbirka xaaladaha daran.

  • Chuck faakuumka dhoobada daloolsan ee maaraynta wafer-ka qaloocan

    Chuck faakuumka dhoobada daloolsan ee maaraynta wafer-ka qaloocan

    Qalabka dhoobada ee St.Cera ee daloolada leh waxaa laga sameeyay alumina saafi ah oo heer sare ah oo leh dalool furan oo isku mid ah oo ah 30-45% iyo cabbirrada daloolada oo u dhexeeya 10 ilaa 100 μm. Si ka duwan qalabka godadka leh ee caadiga ah, dusha sare ee daloolada leh waxay bixisaa faakiyuum qaybsan oo ku baahsan dhammaan dhabarka dambe ee wafer-ka, iyadoo si wax ku ool ah u haysa wafer-ka qalloocan, khafiifka ah, ama kuwa la isku dhejiyay iyada oo aan lahayn kor u qaadis ama jabitaan gees ah. Faakiyuumka jilicsan (lagu hagaajin karo iyada oo loo marayo xaddidaha) ayaa sidoo kale ka hortagaya calaamadaynta dhinaca dambe.

  • Chuck faakuumka dhoobada ee ku salaysan Alumina-ku salaysan ee loogu talagalay maaraynta Wafer khafiif ah

    Chuck faakuumka dhoobada ee ku salaysan Alumina-ku salaysan ee loogu talagalay maaraynta Wafer khafiif ah

    Qalabka daloolada leh ee ku salaysan alumina ee St.Cera waxaa laga sameeyay 99.6% nadiifnimo sare oo Al₂O₃ ah iyadoo leh dalool furan oo la xakameeyey oo ah 30-45% iyo cabbir siman oo dalool ah oo u dhexeeya 10 ilaa 50 μm. Si ka duwan qalabka daloolada leh, dusha sare ee daloolada leh waxay bixisaa faakuum qaybsan oo dhan oo ku baahsan dhabarka dambe ee wafer-ka, taasoo meesha ka saaraysa calaamadaynta geeska waxayna suurtogalinaysaa in si fudud loo hayo oo ah mid aad u khafiifsan (≤100 μm) ama wafers qalloocan. Maaddadu waxay bixisaa xoog dabacsan oo ah ≥250 MPa iyo xasillooni kuleyl ah oo ilaa 400°C ah hawada.

  • Saxanka Qaybinta Gaaska Alumina ee loogu talagalay Madaxa Musqusha ee CVD/PVD

    Saxanka Qaybinta Gaaska Alumina ee loogu talagalay Madaxa Musqusha ee CVD/PVD

    Saxanka qaybinta gaaska ee St.Cera (madaxa qubeyska) waxaa si sax ah loogu farsameeyay nadiifnimo sare oo ah 99.8% alumina. Waxay leedahay godad yaryar (dhexroor 0.3–1.5 mm) kuwaas oo hubiya socodka gaaska ee isku midka ah ee dusha sare ee wafer-ka inta lagu jiro hababka CVD, PVD, ama ALD. Xoogga dielectric sare ee saxanka (>15×10⁶ V/m) iyo iska caabbinta balaasmaha ayaa ka dhigaya mid lagama maarmaan u ah dhigista filimka khafiifka ah ee semiconductor-ka.

  • Biinanka Taageerada Dhoobada ee Qalabka Habka Semiconductor-ka

    Biinanka Taageerada Dhoobada ee Qalabka Habka Semiconductor-ka

    Biinanka taageerada dhoobada ah ee St.Cera (oo sidoo kale loo yaqaan biinanka kor u qaada ama biinanka taageerada) waxaa loo isticmaalaa qolalka habka semiconductor-ka si kor loogu qaado biinanka ama substrate-ka inta lagu jiro maaraynta, kululaynta, ama qaboojinta. Laga soo saaray 99.8% alumina ama nitride silicon, biinankani waxay bixiyaan xoog cadaadis sare leh, xasillooni kuleyl, iyo iska caabin kiimiko. Naqshadaynta cidhifka toosan ama fidsan waxay ka hortagtaa xoqidda wafer-ka.