Marka lagu daro faa'iidooyinka waxqabadka dhammaystiran ee walxaha dhaqameed ee Al2O3 iyo BeO, dhoobada Aluminium Nitride (AlN), oo leh gudbin kuleyl sare (dhaqdhaqaaq kuleyl oo aragtiyeed oo monocrystal ah waa 275W/m▪k, gudbin kuleyl oo aragtiyeed oo polycrystal ah waa 70~210W/m▪k), joogto dielectric hooseeya, isku-darka ballaarinta kulaylka oo la jaanqaadaya silikoon keli ah, iyo sifooyin dahaadh koronto oo wanaagsan, waa agab ku habboon substrate-ka wareegga iyo baakadaha warshadaha microelectronics-ka. Sidoo kale waa agab muhiim u ah qaybaha dhoobada qaab-dhismeedka heerkulka sare sababtoo ah sifooyinka farsamada ee heerkulka sare ee wanaagsan, sifooyinka kulaylka iyo xasilloonida kiimikada.
Cufnaanta aragtiyeed ee AlN waa 3.26g/cm3, adkaanta MOHS waa 7-8, iska caabbinta heerkulka qolka ayaa ka weyn 1016Ωm, fiditaanka kulaylkana waa 3.5×10-6/℃ (heerkulka qolka 200℃). Dhoobada AlN ee saafiga ah waa kuwo aan midab lahayn oo hufan, laakiin waxay noqon lahaayeen midabyo kala duwan sida cawl, caddaan cawlan ama huruud khafiif ah, sababtoo ah wasakhda.
Marka laga soo tago kulaylka sare ee kulaylka, dhoobada AlN waxay sidoo kale leedahay faa'iidooyinka soo socda:
1. Dahaarka korontada oo wanaagsan;
2. Isku-darka ballaarinta kulaylka oo la mid ah oo leh monocrystal silicon ah, oo ka sarreeya agabka sida Al2O3 iyo BeO;
3. Xoog farsamo oo sare iyo xoog la mid ah oo la jaanqaadaya dhoobada Al2O3;
4. Joogtada dielectric ee dhexdhexaadka ah iyo luminta dielectric;
5. Marka la barbardhigo BeO, kulaylka kulaylka ee dhoobada AlN saameyn yar ayuu ku leeyahay heerkulka, gaar ahaan ka sarreeya 200℃;
6. Iska caabbinta heerkulka sare iyo iska caabbinta daxalka;
7. Ma aha sun;
8. Loogu dabaqo warshadaha semiconductor-ka, warshadaha birta kiimikada iyo qaybaha kale ee warshadaha.
Waqtiga boostada: Luulyo-14-2023